کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5358585 | 1503628 | 2015 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Transport properties of Ar+ irradiated resistive switching BiFeO3 thin films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
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چکیده انگلیسی
BiFeO3 thin films were irradiated by Ar+ ions with different fluences. The rectifying and resistive switching behaviour were retained on the Au/BiFeO3/Pt stack, and the ON/OFF ratio clearly depends on the Ar+ fluence. It was observed that the transport in high resistance state changes from Poole-Frenkel conduction to space-charge-limited conduction after irradiation. While the conduction of the low resistance state is dominated by both the interface and the bulk thin film in the pristine devices, however, it is only dominated by the interface in the irradiated devices. The observed change of conduction mechanism was explained by additionally created oxygen vacancies (OVs) during irradiation, which also improves the stability of resistive switching.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 336, 1 May 2015, Pages 354-358
Journal: Applied Surface Science - Volume 336, 1 May 2015, Pages 354-358
نویسندگان
L. Jin, Y. Shuai, X. Ou, W.B. Luo, C.G. Wu, W.L. Zhang, D. Bürger, I. Skorupa, T. You, N. Du, O.G. Schmidt, H. Schmidt,