Structural and dielectric properties of Ru-based gate/Hf-doped Ta2O5 stacks

► Homogeneous Hf-doped Ta2O5 high-k dielectric layers deposited. ► Ru-based gate deposition modifies more significantly interfacial layer parameters. ► Ru is thermally stable in contact with Hf-doped Ta2O5. ► O2 annealing of RuO2 metal electrode causes substantial structural modifications.