کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5358705 | 1503658 | 2014 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Relevance of annealing on the stoichiometry and morphology of transparent thin films
ترجمه فارسی عنوان
اهمیت بازده بر روی استوکیومتری و مورفولوژی ورقه های نازک شفاف
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
چکیده انگلیسی
The investigations were performed on samples having a polycrystalline structure, as revealed by X-ray diffraction analysis after annealing process. Moreover, these thin films had a strong orientation with the following planes parallel to the substrate: (1 0 1) for SnO2, (0 0 2) for ZnO:Al and (2 2 2) for ITO film respectively. Atomic force microscopy (AFM) investigations of the ZnO:Al (Rrms = 2.8 nm) and ITO samples (Rrms = 11 nm) show they are homogeneous and a slightly higher roughness (Rrms = 51 nm) for the SnO2 thin film surface. The size and shape of the grains were also observed and investigated by scanning electron microscopy (SEM). All SnO2, ZnO:Al and ITO transparent thin films are uniform and dense.The values obtained for electrical resistivity, transmission and energy bandgap as well as conductivity and transparency properties of these thin films, make them suitable to be used as transparent contact electrodes for solar cells.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 306, 1 July 2014, Pages 47-51
Journal: Applied Surface Science - Volume 306, 1 July 2014, Pages 47-51
نویسندگان
P. Prepelita, V. Craciun, G. Sbarcea, F. Garoi,