Use of a PECVD-PVD process for the deposition of copper containing organosilicon thin films on steel

This paper focuses on the important process parameters required to control the quantity of incorporated copper in the layer, particularly the metalorganic concentration and the sputtering current. The dispersion of copper vs. the thin film thickness is found to be homogeneous. The deposited layers show antimicrobial activity for copper contents higher than X = 38%, where X = [Cu]/([Cu] + [Si]).