کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5358935 1388240 2011 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Well-confined Yb:GdVO4 laser waveguide formed by MeV C3+ ion implantation
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Well-confined Yb:GdVO4 laser waveguide formed by MeV C3+ ion implantation
چکیده انگلیسی
▶ The Yb:GdVO4 planar waveguide has been fabricated by ion implantation. ▶ The dark mode spectra were measured by the prism coupling method. ▶ The refractive index profile includes a non-leaky guiding region. ▶ The beam propagation results indicate that the waveguide can be well-confined. ▶ The efficient Yb3+-related emission in Yb:GdVO4 was observed at room temperature.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 257, Issue 9, 15 February 2011, Pages 4406-4409
نویسندگان
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