کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5358967 | 1503675 | 2014 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Transverse magnetoresistance induced by electron-surface scattering on thin gold films: Experiment and theory
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
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چکیده انگلیسی
We report new experimental data regarding the transverse magnetoresistance measured in a family of thin gold films of different thickness with the electric field E oriented perpendicular to the magnetic field B (both fields contained within the plane of the film), as well as a theoretical description of size effects based upon a solution of Boltzmann Transport Equation. The measurements were performed at low temperatures T (4 K â¤Â T â¤Â 50 K) under magnetic field strengths B (1.5 T â¤Â B â¤Â 9 T). The magnetoresistance signal can be univocally identified as arising from electron-surface scattering, for the Hall mobility at 4 K depends linearly on film thickness. The magnetoresistance signal exhibits a marked thickness dependence, and its curvature as a function of magnetic field B varies with film thickness. The theoretical description of the magnetic field dependence of the magnetoresistance requires a Hall field that varies with the thickness of the film; this Hall field is tuned to reproduce the experimental data.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 289, 15 January 2014, Pages 167-172
Journal: Applied Surface Science - Volume 289, 15 January 2014, Pages 167-172
نویسندگان
Simón Oyarzún, Ricardo HenrÃquez, Marco Antonio Suárez, Luis Moraga, Germán Kremer, Raúl C. Munoz,