کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5359181 | 1503661 | 2014 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The formation of anomalous Hall effect depending on W atoms in ZnO thin films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: The formation of anomalous Hall effect depending on W atoms in ZnO thin films The formation of anomalous Hall effect depending on W atoms in ZnO thin films](/preview/png/5359181.png)
چکیده انگلیسی
This article investigates the effects of intrinsic point defects and extrinsic W atoms on magneto electrical properties in the ZnO lattice. The analyses were accomplished for â¼0.5% W including ZnO thin films, grown using a radio frequency (RF) magnetron sputtering system. The polarized spin current dependent magnetic formation was investigated by longitudinal and transverse magneto electrical measurements in a temperature range of 5Â K to 300Â K. The positive magneto resistivity (PMR) ratios reached 28.8%, 12.7%, and 17.6% at 5Â K for thin films, having different post-deposition annealing conditions as a consequence of ionic W dependent defects in the lattice. Furthermore, an anomalous Hall effect, originating from polarized spin currents, was understood from the split in Hall resistance versus magnetic field (Rxy(H)) curves for the thin film with high amount of Zn2+ and W6+ ionic defects.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 303, 1 June 2014, Pages 76-83
Journal: Applied Surface Science - Volume 303, 1 June 2014, Pages 76-83
نویسندگان
Musa Mutlu Can, S. Ismat Shah, Tezer Fırat,