Preparation of ZnO films with variable electric field-assisted atomic layer deposition technique

- ZnO films have been grown on (0 0 0 1) sapphire substrates by variable electric field-assisted ALD technique.
- XRD and XPS spectra demonstrate that not only the crystal orientation, but also the oxygen vacancy defect could be modulated by changing the electric field directions of the chamber during precursor pulses.
- The results of HRTEM show the obtained ZnO thin films have a high crystal quality.
- It is supposed that substrate electric polarity would expect to modulate the structures and properties of ZnO films.