کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5359261 | 1388245 | 2011 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Controlling surface shallow junction depth by a rapid thermal annealing process with low ambient pressure
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Controlling surface shallow junction depth by a rapid thermal annealing process with low ambient pressure Controlling surface shallow junction depth by a rapid thermal annealing process with low ambient pressure](/preview/png/5359261.png)
چکیده انگلیسی
We demonstrate the effect of annealing pressure on the redistribution of phosphorus dopants in silicon. The phosphorus concentration in the kink region is dependent on the annealing pressure that enhances the phosphorous transient out-diffusion. The phosphorous in-diffusion in the tail region is suppressed by this transient out-diffusion under low annealing pressure (below the atmosphere), and the surface shallow junction depth is reduced. The phenomenon of dose loss caused by the phosphorous piling-up or sublimation at the surface has an influence on the electrical characteristics and the surface roughness. Moderate annealing pressure can reduce the junction depth and only slightly increase the sheet resistance and surface roughness.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 257, Issue 7, 15 January 2011, Pages 2494-2497
Journal: Applied Surface Science - Volume 257, Issue 7, 15 January 2011, Pages 2494-2497
نویسندگان
Yi-Jen Huang, Chun-Chu Liu, Kuang-Yao Lo, Sheng-Yuan Chu,