Conductive aluminum line formation on aluminum nitride surface by infrared nanosecond laser

In this paper the fabrication of conductive aluminum paths on AlN ceramic's surface due to the interaction of laser radiation Nd:YAG (1.064 μm) is presented. The metallization process produces an appropriate power value on the ceramics surface to ensure the correct temperature (2200 °C) for which aluminum and nitrogen bonds are broken. Studies have been undertaken on creating low-ohmic structures depending on the parameters such as radiation power, scanning speed, the coverage of subsequent pulses and the environmental impact of the process (air, nitrogen, argon). Furthermore, with regards to the application of this method, it was significant to determine the thickness of the functional layer. A structure of the resistivity of ρ = 0.64 × 10−6 Ω m and aluminum layer thickness of 10 μm was achieved for the process carried out on the inert gas, argon. In addition, a quantitative analysis of nitrogen and aluminum for laser-treated structures was conducted. The performed tests confirmed that the highest amount of aluminum was produced on the surface treated by laser radiation in the environment of the process gas, argon.