کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5359499 | 1388248 | 2010 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
In situ growth stresses during the phase separation of immiscible FeCu thin films
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
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چکیده انگلیسی
This paper addresses the in situ growth stress evolution and post-growth stress relaxation during the phase separation of immiscible Fe0.51Cu0.49 thin films at various in situ deposition temperatures. Each film was sputter-deposited onto a 10 nm Si3N4 underlayer that was grown on top of Si [0 0 1] substrate at 25 °C, 145 °C, 205 °C, 265 °C or 325 °C. The thin film stress was measured using a wafer curvature technique. The in situ growth stress increased in compression with increasing substrate temperature. The stress relaxation of the Fe0.51Cu0.49 was found to have a linear increase with the inverse grain size for films deposited at temperatures greater than 205 °C. The stress state was correlated to the films' phase and morphology by X-ray diffraction, (scanning) transmission electron microscopy and atomic force microscopy techniques.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 257, Issue 5, 15 December 2010, Pages 1500-1505
Journal: Applied Surface Science - Volume 257, Issue 5, 15 December 2010, Pages 1500-1505
نویسندگان
B. Fu, G.B. Thompson,