کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5359518 | 1388248 | 2010 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Preparation of p-type CdS thin films and in situ dark conductivity in vacuum deposited CdS:Cu films
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
CdS:Cu thin films were prepared using a vacuum co-evaporation technique. The Hall measurements indicate that the conductivity characteristic of CdS thin films transformed from highly compensated in as-grown or weakly annealed materials to p-type conductive in strongly annealed materials. X-ray diffraction spectra show that as-deposited thin films were the hexagonal phase of CdS except the presence of copper for high Cu doping and the diffraction peaks of Cu disappeared after annealing. From the X-ray photoelectron spectroscopy we found the ionization of Cu atoms and the formation of an acceptor level. In situ dark conductivity in vacuum as-deposited CdS:Cu was performed in the temperature range between 27 and 250 °C. An abnormal temperature dependence of conductivity was observed in medium and heavily Cu-doped films. The formation of a p-type material at a certain temperature was also studied by the hot probe measurements, which indicates a complex compensation process in the Cu-doped CdS films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 257, Issue 5, 15 December 2010, Pages 1623-1627
Journal: Applied Surface Science - Volume 257, Issue 5, 15 December 2010, Pages 1623-1627
نویسندگان
Hanke Xie, Caijuan Tian, Wei Li, Lianghuan Feng, Jingquan Zhang, Lili Wu, Yaping Cai, Zhi Lei, Yujin Yang,