Determination of non-uniform graphene thickness on SiC (0Â 0Â 0Â 1) by X-ray diffraction

Epitaxial graphene thickness distribution grown on Si-terminated SiC (0 0 0 1) surface was analyzed by using an X-ray diffraction (XRD) pattern and a simple equation. These results were confirmed by low accelerating voltage scanning electron microscopy and angle resolved photoemission spectroscopy. Despite its simplicity, proposed XRD analysis provides fairly accurate information on layer spacing and thickness distribution of graphene layers. It is expected that this method is useful for quick evaluation of graphene layer numbers on large scale substrate.