Low temperature processed InGaZnO thin film transistor using the combination of hydrogen irradiation and annealing

Device performance of radio frequency (RF) sputtered InGaZnO (IGZO) thin film transistors (TFTs) were improved using combination post-treatment with hydrogen irradiation and low temperature annealing at 150 °C. Under the combination treatment, IGZO TFTs were significantly enhanced without changing physical structure and chemical composition. On the other hand, the electronic structure represents a dramatically modification of the chemical bonding states, band edge states below the conduction band, and band alignment. Compared to the hydrogen irradiation or low temperature annealing, the combination treatment induces the increase of oxygen deficient chemical bonding states, the shallow band edge state below the conduction band, and the smaller energy difference of conduction band offset, which can generate the increase in charge carrier and enhance the device performance.