کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5360323 | 1388260 | 2008 | 4 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Characterisation of the influence of multi-quantum barrier reflectors within GaInP/AlGaInP quantum well lasers using near-field imaging techniques Characterisation of the influence of multi-quantum barrier reflectors within GaInP/AlGaInP quantum well lasers using near-field imaging techniques](/preview/png/5360323.png)
Using a near-field scanning optical microscope, near-field photocurrent and topographic imaging has measured the effect on intrinsic electric fields and photocurrent propagation resulting from inserting multi-quantum barrier (MQB) super-lattices into quantum well lasers. Measurements on devices at two different excitation wavelengths have highlighted the sensitivity of the near-field optical technique. Strong correlations were seen in the photocurrent response of the multi-quantum barrier regions when compared with simulations made on the electric field generated within the structure. As a result, photocurrent attenuation was attributed to carrier confinement in these barrier regions when compared to a control sample. The measurements illustrate the effectiveness of the MQB, in addition to the sensitivity and power of the near-field photocurrent technique.
Journal: Applied Surface Science - Volume 255, Issue 3, 30 November 2008, Pages 649-652