Penetration depth profiling of proton-irradiated 4H-SiC at 6Â MeV and 8Â MeV by micro-Raman spectroscopy

► Proton-irradiated 4H-SiC was probed by micro-Raman scattering spectroscopy. ► The changes of the line-shape and peak position in LOPC mode were analyzed. ► The estimated penetration depths from 6 to 8 MeV energy protons were 180 and 300 μm, respectively.