Liquid polycarbosilane derived SiC coating on silicon (1Â 1Â 1) wafer for enhanced mechanical properties

► Deposition of SiC film from polycarbosilane precursor by modified CVD method. ► Polymer to ceramics conversion at moderate temperature of 800, 900 and 1000 °C. ► Formation of β-SiC and α-SiC films on silicon (1 1 1) wafer at moderate temperatures. ► Enhanced hardness(18 GPa), toughness of coated samples than that of uncoated sample. ► Promising material for MEMS application.