Hydrogenated amorphous silicon-carbide thin films with high photo-sensitivity prepared by layer-by-layer hydrogen annealing technique

► a-SiC:H films were prepared by layer-by-layer hydrogen plasma annealing technique. ► The electrical and optical properties of prepared films were studied. ► Photo-conductivity was improved after hydrogen plasma annealing. ► High photo-sensitivity (∼106) was achieved for 10 s layer-by-layer annealed film.