Conversion of Y3(Al,Ga)5O12:Tb3+ to Y2Si2O7:Tb3+ thin film by annealing at higher temperatures

► Y3(Al,Ga)5O12:Tb thin films were grown on Si(1 0 0) substrates. ► Y3(Al,Ga)5O12:Tb thin film was converted to Y2Si2O7:Tb due to Si interdiffusion at high temperature annealing. ► The presence of different types of traps resulting from the change on the structure of the thin films was monitored with thermoluminescence. ► The excitation and the emission bands changed due to new compound formation.