Effects of substrate temperature on structural and electrical properties of SiO2-matrix boron-doped silicon nanocrystal thin films

► The effects of Ts on the micro-structure and electrical properties of boron-doped Si-NC thin films were investigated. ► The phase separation of annealed SRSO thin films was hindered when the Ts was increased from 373 K to 676 K. ► When the Ts was increased from 373 K to 676 K, the crystalline fraction of 1373 K-annealed thin films decreased from 52.2% to 38.1%. ► The dark conductivity of 1373 K-annealed thin films reduced from 8 × 10−3 S/cm to 5.5 × 10−5 S/cm when the Ts was increased from 373 K to 676 K.