کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5360500 1388262 2010 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Temperature dependence of the sticking coefficient in atomic layer deposition
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Temperature dependence of the sticking coefficient in atomic layer deposition
چکیده انگلیسی
The temperature dependence of the sticking coefficient (SC) of precursor molecules used in atomic layer deposition (ALD) was investigated. Tetrakis(ethylmethylamino)hafnium (TEMAHf) and Pentamethylcyclopentadienyltitan-trimethoxid (Cp*Ti(OMe)3) were used in combination with ozone to deposit hafnium dioxide and titanium dioxide films at different substrate temperatures. The SC of TEMAHf was determined at 180, 230, and 270 °C. The SC of TEMAHf depends exponentially on the substrate temperature. The activation energy and the pre-exponential factor were obtained for this ALD process. The SC of Cp*Ti(OMe)3 was determined at 270 °C. A possible explanation for the small SC of Cp*Ti(OMe)3 could be the reduced symmetry of the precursor molecule. Therefore, symmetric precursor molecules and high process temperatures appear beneficial for efficient ALD processes.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 256, Issue 12, 1 April 2010, Pages 3778-3782
نویسندگان
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