کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5360521 | 1388262 | 2010 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Low-temperature deposition of α-Al2O3 films by laser chemical vapor deposition using a diode laser
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Low-temperature deposition of α-Al2O3 films by laser chemical vapor deposition using a diode laser Low-temperature deposition of α-Al2O3 films by laser chemical vapor deposition using a diode laser](/preview/png/5360521.png)
چکیده انگلیسی
We prepared Al2O3 films by laser chemical vapor deposition (LCVD) using a diode laser and aluminum acetylacetonate (Al(acac)3) precursors and investigated the effects of laser power (PL), deposition temperature (Tdep), and total pressure (Ptot) in a reaction chamber on the crystal phase, microstructure, and deposition rate (Rdep). An amorphous phase was obtained at PL = 50 W, whereas an α-phase was obtained at PL > 100 W. At PL = 150 and 200 W (1 0 4)- and (0 1 2)-oriented α-Al2O3 films were obtained, respectively. The Rdep of α-Al2O3 films increases with decreasing PL and Ptot. Single-phase α-Al2O3 film was obtained at Tdep = 928 K, which is about 350 K lower than that obtained by conventional thermal CVD using Al(acac)3 precursor.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 256, Issue 12, 1 April 2010, Pages 3906-3911
Journal: Applied Surface Science - Volume 256, Issue 12, 1 April 2010, Pages 3906-3911
نویسندگان
Yu You, Akihiko Ito, Rong Tu, Takashi Goto,