کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5360620 | 1503695 | 2013 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of selenization parameters on growth characteristics of the Cu(In,Ga)Se2 films deposited by sputtering with a Cu-In-Ga, Cu-In-Ga2Se3, or Cu-Ga-In2Se3 target and a subsequent selenization procedure at 550-700 °C
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effects of selenization parameters on growth characteristics of the Cu(In,Ga)Se2 films deposited by sputtering with a Cu-In-Ga, Cu-In-Ga2Se3, or Cu-Ga-In2Se3 target and a subsequent selenization procedure at 550-700 °C Effects of selenization parameters on growth characteristics of the Cu(In,Ga)Se2 films deposited by sputtering with a Cu-In-Ga, Cu-In-Ga2Se3, or Cu-Ga-In2Se3 target and a subsequent selenization procedure at 550-700 °C](/preview/png/5360620.png)
چکیده انگلیسی
⺠Cu(In,Ga)Se2 films obtained from different targets were compared. ⺠The three kinds of targets for CIGSe were Cu-In-Ga, Cu-In-Ga2Se3, or Cu-Ga-Se2Se3. ⺠No reports had studied the selenization above 600 °C due to vaporization problem. ⺠The selenization problems were presented and selenization mechanism was proposed. ⺠Our CIGSe film selenized at 650 °C was dense and had singe-grain thickness of 1.5-3 μm.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 268, 1 March 2013, Pages 22-27
Journal: Applied Surface Science - Volume 268, 1 March 2013, Pages 22-27
نویسندگان
Dong-Hau Kuo, Yung-Chin Tu, Mehrdad Monsefi,