Influence of GaAs(0Â 0Â 1) pregrowth surface morphology and reconstruction on the growth of InGaAs layers

► In0.15Ga0.85As film has been deposited on different GaAs pregrowth surface by MBE. ► As coverage and roughness influence heteroepitaxial growth in the earliest stages. ► STM and RHEED patterns reflect the morphology and reconstruction of film surface.