کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5360714 | 1388265 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of Ge surface termination on oxidation behavior
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Sulfur-termination was formed on the Ge(1Â 0Â 0) surface using (NH4)2S solution. Formation of Ge-S and the oxidation of the S-terminated Ge surface were monitored with multiple internal reflection Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy. In the 0.5, 5, or 20% (NH4)2S solution, H-termination on the Ge(1Â 0Â 0) surface was substituted with S-termination in 1Â min. When the S-terminated Ge(1Â 0Â 0) surface was exposed in air ambient, the oxidation was retarded for about 3600Â min. The preservation time of the oxide layer up to one monolayer of S-terminated Ge(1Â 0Â 0) surface was about 120 times longer than for the H-terminated Ge(1Â 0Â 0) surface. However, the oxidation of S-terminated Ge(1Â 0Â 0) surface drastically increased after the threshold time. There was no significant difference in threshold time between S-terminations formed in 0.5, 5, and 20% (NH4)2S solutions. With the surface oxidation, desorption of S on the Ge surface was observed. The desorption behavior of sulfur on the S-terminated Ge(1Â 0Â 0) surface was independent of the concentration of the (NH4)2S solution that forms S-termination. Non-ideal S-termination on Ge surfaces may be related to drastic oxidation of the Ge surface. Finally, with the desulfurization on the S-terminated Ge(1Â 0Â 0) surface, oxide growth is accelerated.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 254, Issue 23, 30 September 2008, Pages 7544-7548
Journal: Applied Surface Science - Volume 254, Issue 23, 30 September 2008, Pages 7544-7548
نویسندگان
Younghwan Lee, Kibyung Park, Yong Soo Cho, Sangwoo Lim,