کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5360740 | 1388265 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
An ab initio-based approach to phase diagram calculations for GaN(0Â 0Â 0Â 1) surfaces
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Surface phase diagrams of GaN(0Â 0Â 0Â 1)-(2Â ÃÂ 2) and pseudo-(1Â ÃÂ 1) surfaces are systematically investigated by using our ab initio-based approach. The phase diagrams are obtained as functions of temperature T and Ga beam equivalent pressure pGa by comparing chemical potentials of Ga atom in the vapor phase with that on the surface. The calculated results imply that the (2Â ÃÂ 2) surface is stable in the temperature range of 700-1000Â K at 10â8Â Torr and 900-1400Â K at 10â2Â Torr. This is consistent with experimental stable temperature range for the (2Â ÃÂ 2). On the other hand, the pseudo-(1Â ÃÂ 1) phase is stable in the temperature range less than 700Â K at 10â8Â Torr and less than 1000Â K at 10â2Â Torr. Furthermore, the stable region of the pseudo-(1Â ÃÂ 1) phase almost coincides with that of the (2Â ÃÂ 2) with excess Ga adatom. This suggests that Ga adsorption or desorption during GaN MBE growth can easily change the pseudo-(1Â ÃÂ 1) to the (2Â ÃÂ 2) with Ga adatom and vice versa.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 254, Issue 23, 30 September 2008, Pages 7659-7662
Journal: Applied Surface Science - Volume 254, Issue 23, 30 September 2008, Pages 7659-7662
نویسندگان
Tomonori Ito, Tomoyuki Nakamura, Toru Akiyama, Kohji Nakamura,