کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5360754 | 1388265 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of the vacuum level upon the growth of carbon nanotubes on silicon carbide surface
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We have investigated the influence of the vacuum level upon the growth of carbon nanotubes (CNTs) on 6H-SiC (0001¯) surface.CNTs of about 160 nm in length were formed densely and uniformly on the 6H-SiC surface during annealing at 1700 °C in a high vacuum (â¼10â2 Pa). CNTs of about 1 μm in length were formed during annealing at 1700 °C in an ultra-high vacuum (â¼10â7 Pa). However, CNTs were not formed and SiO2 layers were formed on the SiC surface at 1700 °C in air. It is found that longer CNTs can grow up in an ultra-high vacuum, moreover, a little aligned and low-density graphite layers, or carbon nanofibers can also grow up.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 254, Issue 23, 30 September 2008, Pages 7723-7727
Journal: Applied Surface Science - Volume 254, Issue 23, 30 September 2008, Pages 7723-7727
نویسندگان
J. Yoshida, Y. Yonekubo, T. Nakanishi, H. Okado, M. Naitoh, T. Sakata, H. Mori,