کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5361045 1503647 2014 33 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Preparation, and characterizations of a novel luminescence Lu2WO6:Eu3+ film as potential scintillator
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Preparation, and characterizations of a novel luminescence Lu2WO6:Eu3+ film as potential scintillator
چکیده انگلیسی

- Novel Lu2WO6:Eu3+ luminescence films with micron-thickness were first fabricated on Si (1 0 0) wafer by a chemical route.
- Lu2WO6:Eu3+ films with dense and homogeneous morphology exhibit good scintillation properties.
- Luminescence mechanism associated with Eu3+ site occupation and possible energy transfer of Lu2WO6:Eu3+ films have also been proposed.
- A new method of hydrophilizing Si (1 0 0) wafers without HF is proposed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 317, 30 October 2014, Pages 730-736
نویسندگان
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