کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5361070 | 1388269 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Formation of aligned silicon-nanowire on silicon in aqueous HF/(AgNO3Â +Â Na2S2O8) solution
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Formation of aligned silicon-nanowire on silicon in aqueous HF/(AgNO3Â +Â Na2S2O8) solution Formation of aligned silicon-nanowire on silicon in aqueous HF/(AgNO3Â +Â Na2S2O8) solution](/preview/png/5361070.png)
چکیده انگلیسی
Highly oriented silicon nanowire (SiNW) layer was fabricated by etching Si substrate in HF/(AgNO3 + Na2S2O8) solution at 50 °C. The morphology and the photoluminescence (PL) of the etched layer as a function of Na2S2O8 concentration were studied. The SiNW layers formed on silicon were investigated by scanning electron microscopy (SEM) and energy-dispersive X-ray (EDX). It was demonstrated that the morphology of the etched layers depends on the Na2S2O8 concentration. Room-temperature photoluminescence (PL) from etched layer was observed. It was found that the utilisation of Na2S2O8 decreases PL peak intensity. Finally, a discussion on the formation process of the silicon nanowires is presented.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 254, Issue 22, 15 September 2008, Pages 7219-7222
Journal: Applied Surface Science - Volume 254, Issue 22, 15 September 2008, Pages 7219-7222
نویسندگان
R. Douani, T. Hadjersi, R. Boukherroub, L. Adour, A. Manseri,