کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5361527 | 1388274 | 2008 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Charge transport diagnosis by: I-V (resistivity), screening and Debye length, mean free path, Mott effect and Bohr radius in InAs, In0.53Ga0.47As and GaAs MBE epitaxial layers
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Charge transport diagnosis by: I-V (resistivity), screening and Debye length, mean free path, Mott effect and Bohr radius in InAs, In0.53Ga0.47As and GaAs MBE epitaxial layers Charge transport diagnosis by: I-V (resistivity), screening and Debye length, mean free path, Mott effect and Bohr radius in InAs, In0.53Ga0.47As and GaAs MBE epitaxial layers](/preview/png/5361527.png)
چکیده انگلیسی
We suppose either that during their epitaxial growth all of the investigated layers were unintentionally doped with excess atoms of one component, vacancies of other or that dangling bonds are present. Therefore, in the range of low temperatures, the possible and dominant conduction mechanism is conduction via such defects, with electrons moving by thermally activated hopping.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 254, Issue 21, 30 August 2008, Pages 6736-6741
Journal: Applied Surface Science - Volume 254, Issue 21, 30 August 2008, Pages 6736-6741
نویسندگان
Andrzej Wolkenberg, Tomasz PrzesÅawski,