کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5361545 | 1388274 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structure and micro-mechanical properties of helium-implanted layer on Ti by plasma-based ion implantation
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
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چکیده انگلیسی
The present paper concentrates on structure and micro-mechanical properties of the helium-implanted layer on titanium treated by plasma-based ion implantation with a pulsed voltage of â30Â kV and doses of 3, 6, 9 and 12Â ÃÂ 1017Â ions/cm2, respectively. X-ray photoelectron spectroscopy and transmission electron microscopy are employed to characterize the structure of the implanted layer. The hardnesses at different depths of the layer were measured by nano-indentation. We found that helium ion implantation into titanium leads to the formation of bubbles with a diameter from a few to more than 10Â nm and the bubble size increases with the increase of dose. The primary existing form of Ti is amorphous in the implanted layer. Helium implantation also enhances the ingress of O, C and N and stimulates the formations of TiO2, Ti2O3, TiO, TiC and TiN in the near surface layer. And the amount of the ingressed oxygen is obviously higher than those of nitrogen and carbon due to its higher activity. At the near surface layer, the hardnesses of all implanted samples increases remarkably comparing with untreated one and the maximum hardness has an increase by a factor of up to 3.7. For the samples implanted with higher doses of 6, 9 and 12Â ÃÂ 1017Â He/cm2, the local displacement bursts are clearly found in the load-displacement curves. For the samples implanted with a lower dose of 3Â ÃÂ 1017Â He/cm2, there is no obvious displacement burst found. Furthermore, the burst width increases with the increase of the dose.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 254, Issue 21, 30 August 2008, Pages 6837-6841
Journal: Applied Surface Science - Volume 254, Issue 21, 30 August 2008, Pages 6837-6841
نویسندگان
Xinxin Ma, Jinlong Li, Mingren Sun,