کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5361573 | 1388274 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of modifying a methyl siloxane-based dielectric by a polymer thin film for pentacene thin-film transistors
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effect of modifying a methyl siloxane-based dielectric by a polymer thin film for pentacene thin-film transistors Effect of modifying a methyl siloxane-based dielectric by a polymer thin film for pentacene thin-film transistors](/preview/png/5361573.png)
چکیده انگلیسی
We report on the fabrication of pentacene thin-film transistors (TFTs) utilizing a spun methyl siloxane-based spin-on-glass (SOG) dielectric and show that these devices can give a similar electrical performance as achieved by using pentacene TFTs with a silicon dioxide (SiO2) dielectric. To improve the electrical performance of pentacene TFTs with the SOG dielectric, we employed a hybrid dielectric of an SOG/cross-linked poly-4-vinylphenol (PVP) polymer. The PVP film was deposited onto the spun SOG dielectric prior to pentacene evaporation, resulting in an improvement of the saturation field effect mobility (μsat) from 0.01 cm2/(V s) to 0.76 cm2/(V s). The good surface morphology and the matching surface energy of the SOG dielectric that was modified with the polymer thin film allow the optimized growth of crystalline pentacene domains whose nuclei are embedded in an amorphous phase.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 254, Issue 21, 30 August 2008, Pages 6987-6990
Journal: Applied Surface Science - Volume 254, Issue 21, 30 August 2008, Pages 6987-6990
نویسندگان
Sang-Il Shin, Jae-Hong Kwon, Jung-Hoon Seo, Byeong-Kwon Ju,