کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5361653 | 1388275 | 2009 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Fabrication of microchannels in single-crystal GaN by wet-chemical-assisted femtosecond-laser ablation
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Fabrication of microchannels in single-crystal GaN by wet-chemical-assisted femtosecond-laser ablation Fabrication of microchannels in single-crystal GaN by wet-chemical-assisted femtosecond-laser ablation](/preview/png/5361653.png)
چکیده انگلیسی
We investigated micro- and nano-fabrication of wide band-gap semiconductor gallium nitride (GaN) using a femtosecond (fs) laser. Nanoscale craters were successfully formed by wet-chemical-assisted fs-laser ablation, in which the laser beam is focused onto a single-crystal GaN substrate in a hydrochloric acid (HCl) solution. This allows efficient removal of ablation debris produced by chemical reactions during ablation, resulting in high-quality ablation. However, a two-step processing method involving irradiation by a fs-laser beam in air followed by wet etching, distorts the shape of the crater because of residual debris. The threshold fluence for wet-chemical-assisted fs-laser ablation is lower than that for fs-laser ablation in air, which is advantageous for improving fabrication resolution since it reduces thermal effects. We have fabricated craters as small as 510Â nm by using a high numerical aperture (NA) objective lens with an NA of 0.73. Furthermore, we have formed three-dimensional hollow microchannels in GaN by fs-laser direct-writing in HCl solution.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 255, Issue 24, 30 September 2009, Pages 9770-9774
Journal: Applied Surface Science - Volume 255, Issue 24, 30 September 2009, Pages 9770-9774
نویسندگان
Seisuke Nakashima, Koji Sugioka, Katsumi Midorikawa,