The influences of high energetic oxygen negative ions and active oxygen on the microstructure and electrical properties of ZnO:Al films by MF magnetron sputtering

► The minimum resistivity of films on drum was 2.7 × 10−3 Ω cm. ► The resistivity of post- annealed films was 5.1 × 10−4 Ω cm. ► The oxygen negative ions dominated films properties at erosion area. ► The active oxygen dominated films properties at non-erosion area.