As-doped p-type ZnO films grown on SiO2/Si by radio frequency magnetron sputtering

p-Type ZnO:As films with a hole concentration of 1016-1017 cm−3 and a mobility of 1.32-6.08 cm2/V s have been deposited on SiO2/Si substrates by magnetron sputtering. XRD, SEM, Hall measurements are used to investigate the structural and electrical properties of the films. A p-n homojunction comprising an undoped ZnO layer and a ZnO:As layer exhibits a typical rectifying behavior. Our study demonstrates a simple method to fabricate reproducible p-type ZnO film on the SiO2/Si substrate for the development of ZnO-based optoelectronic devices on Si-based substrates.