کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5361980 1388279 2008 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Comparison of annealing effects on Zn-doped GaMnAs and undoped GaMnAs epilayers
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Comparison of annealing effects on Zn-doped GaMnAs and undoped GaMnAs epilayers
چکیده انگلیسی
To compare the annealing effects on GaMnAs-doped with Zn (GaMnAs:Zn) and undoped GaMnAs (u-GaMnAs) epilayers, we grew GaMnAs thin films at 200 °C by molecular beam epitaxy (MBE) on GaAs substrates, and they were annealed at temperatures ranging from 220 °C to 380 °C for 100 min in air. These epilayers were characterized by high-resolution X-ray diffraction (XRD), electrical, and magnetic measurements. A maximum resistivity at temperatures Tm close to the Curie temperatures Tc was observed from the measurement of the temperature-dependent resistivity ρ(T) for both the GaMnAs:Zn and the u-GaMnAs samples. We found, however, that the maximum temperature Tm observed for GaMnAs:Zn epilayers increased with increasing annealing temperature, which was different from the result with the u-GaMnAs epilayers. The formation of GaAs:Zn and MnAs or Mn-Zn-As complexes with increasing annealing temperature is most likely responsible for the differences in appearance.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 254, Issue 20, 15 August 2008, Pages 6648-6652
نویسندگان
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