کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5362061 1388280 2009 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Studies on electrodeposited As2S3 thin films by double exposure holographic interferometry technique
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Studies on electrodeposited As2S3 thin films by double exposure holographic interferometry technique
چکیده انگلیسی
Arsenic trisulphide (As2S3) thin films have been deposited onto stainless steel and fluorine doped tin oxide (FTO) coated glass substrates by electrodeposition technique using arsenic trioxide (As2O3) and sodium thiosulphate (Na2S2O3) as precursors and ethylene diamine tetracetic acid (EDTA) as a complexing agent. Double exposure holographic interferometry (DEHI) technique was used to determine the thickness and stress of As2S3 thin films. It was observed that the thickness of the thin film increases whereas film stress to the substrate decreases with an increase in the deposition time. X-ray diffraction and water contact angle measurements showed polycrystalline and hydrophilic surface respectively. The bandgap energy increases from 1.82 to 2.45 eV with decrease in the film thickness from 2.2148 to 0.9492 μm.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 255, Issue 20, 30 July 2009, Pages 8688-8694
نویسندگان
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