کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5362147 1388281 2012 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Infrared ellipsometry as an investigation tool of thin layers grown into plasma immersion N+ implanted silicon
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Infrared ellipsometry as an investigation tool of thin layers grown into plasma immersion N+ implanted silicon
چکیده انگلیسی
► SiOxNy layers were synthesized by high-temperature (1050 °C) annealing in oxidizing ambient of plasma immersion N+ ion implanted Si substrates. ► The IRSE spectra analysis of the dielectric functions showed that, depending on N+ fluence (1016-1018 N+/cm2) and annealing duration (10 and 20 min) the grown layers were either as silicon oxynitride with considerably low N content or silicon dioxide enriched with nitrogen. ► SiN, SiNO and SiSi chemical bonds in the silicon oxide network were identified by Infrared ellipsometry and confirmed by X-ray Photoelectron Spectroscopy.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 258, Issue 18, 1 July 2012, Pages 7195-7201
نویسندگان
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