کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5362307 | 1388283 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Fast response ultraviolet photoconductive detectors based on Ga-doped ZnO films grown by radio-frequency magnetron sputtering
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Fast response ultraviolet photoconductive detectors based on Ga-doped ZnO films grown by radio-frequency magnetron sputtering Fast response ultraviolet photoconductive detectors based on Ga-doped ZnO films grown by radio-frequency magnetron sputtering](/preview/png/5362307.png)
چکیده انگلیسی
A metal-semiconductor-metal photoconductive detector was fabricated on c-axis preferred oriented Ga-doped ZnO (ZnO:Ga) thin film prepared on quartz by radio-frequency magnetron sputtering. With a 10Â V bias, a responsivity of about 2.6Â A/W at 370Â nm was obtained in the ultraviolet region. The photocurrent increases linearly with incident power density for more than two orders of magnitude. The transient response measurement revealed photoresponse with a rise time of 10Â ns and a fall time of 960Â ns, respectively. The results are much faster than those reported in photoconductive detectors based on unintentionally doped n-type ZnO films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 257, Issue 3, 15 November 2010, Pages 921-924
Journal: Applied Surface Science - Volume 257, Issue 3, 15 November 2010, Pages 921-924
نویسندگان
Jian Sun, Feng-Juan Liu, Hai-Qin Huang, Jian-Wei Zhao, Zuo-Fu Hu, Xi-Qing Zhang, Yong-Sheng Wang,