کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5362330 | 1388283 | 2010 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structural, electrical and optical properties of Ga-doped ZnO films on PET substrate
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The effects of O2 plasma pretreatment on the properties of Ga-doped ZnO films on PET substrate were studied. Ga-doped ZnO films were fabricated by RF magnetron sputtering process. To improve surface energy and adhesion of PET substrate, O2 plasma pretreatment process was used prior to GZO sputtering. With increasing O2 plasma treatment time, the contact angle decreases and the RMS surface roughness increases significantly. The transmittance of GZO films on PET substrate in a wavelength of 550 nm was 70-84%. With appropriate O2 plasma treatment, the resistivity of GZO films on PET substrate was 3.4 Ã 10â3 Ω cm.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 257, Issue 3, 15 November 2010, Pages 1063-1067
Journal: Applied Surface Science - Volume 257, Issue 3, 15 November 2010, Pages 1063-1067
نویسندگان
Byeong-Guk Kim, Jeong-Yeon Kim, Seok-Jin Lee, Jae-Hwan Park, Dong-Gun Lim, Mun-Gi Park,