کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5362333 | 1388283 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Investigation of etch characteristics of non-polar GaN by wet chemical etching
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We characterized the surface defects in a-plane GaN, grown onto r-plane sapphire using a defect-selective etching (DSE) method. The surface morphology of etching pits in a-plane GaN was investigated by using different combination ratios of H3PO4 and H2SO4 etching media. Different local etching rates between smooth and defect-related surfaces caused variation of the etch pits made by a 1:3 ratio of H3PO4/H2SO4 etching solution. Analysis results of surface morphology and composition after etching by scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) demonstrated that wet chemical etching conditions could show the differences in surface morphology and chemical bonding on the a-plane GaN surface. The etch pits density (EPD) was determined as 3.1Â ÃÂ 108Â cmâ2 by atom force microscopy (AFM).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 257, Issue 3, 15 November 2010, Pages 1080-1083
Journal: Applied Surface Science - Volume 257, Issue 3, 15 November 2010, Pages 1080-1083
نویسندگان
Hsiao-Chiu Hsu, Yan-Kuin Su, Shin-Hao Cheng, Shyh-Jer Huang, Jia-Ming Cao, Kuan-Chun Chen,