کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5362334 | 1388283 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Catalyst-free growth of well-aligned arsenic-doped ZnO nanowires by chemical vapor deposition method
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
ZnO nanowires with different arsenic concentration were grown on Si (1Â 0Â 0) substrates by chemical vapor deposition method without using catalyst. Zn/GaAs mixed powders were used as Zn and As source, respectively. Oxygen was used as oxidant. The images of scanning electron microscope show that the arsenic-doped ZnO nanowires with preferred c-axial orientation were obtained, which is in well accordance with the X-ray diffraction analysis. The arsenic related acceptor emission was observed in the photoluminescence spectra at 11Â K for all arsenic-doped ZnO samples. This method for the preparation of arsenic-doped ZnO nanowires may open the way to realize the ZnO nanowires based light-emitting diode and laser diode.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 257, Issue 3, 15 November 2010, Pages 1084-1087
Journal: Applied Surface Science - Volume 257, Issue 3, 15 November 2010, Pages 1084-1087
نویسندگان
Q.J. Feng, L.Z. Hu, H.W. Liang, Y. Feng, J. Wang, J.C. Sun, J.Z. Zhao, M.K. Li, L. Dong,