کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5362516 | 1388289 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of cap layer on ohmic Ti/Al contacts to Si+ implanted GaN
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
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چکیده انگلیسی
A low resistivity ohmic contact to Si-implanted GaN was achieved using a metal combination of Ti/Al. The effect of a protection cap during post-implantation annealing is investigated, and how it affects the specific contact resistivity (Ïc). Relevant differences between the protected (PR) sample with SiO2 and unprotected (UP) sample during the post-implantation annealing were observed after metal alloying at 700 °C. The lower values of Ïc have been obtained for UP sample, but with very low reproducibility. In contrast, SiO2 cap layer has demonstrated its relevance in yielding a much more uniformity of a relatively low Ïc around 10â5 Ω cm2. Related mechanism for the uniformity in Ïc was discussed based on the results obtained from electrical measurements, XRD (X-ray diffraction) analysis, AFM (atomic force microscopy) and SEM (scanning electron microscopy) observations.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 255, Issue 12, 1 April 2009, Pages 6057-6060
Journal: Applied Surface Science - Volume 255, Issue 12, 1 April 2009, Pages 6057-6060
نویسندگان
Marcel Placidi, A. Pérez-Tomás, A. Constant, G. Rius, N. Mestres, J. Millán, P. Godignon,