کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5362548 | 1388289 | 2009 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characteristics of Ni films deposited on SiO2/Si(1Â 0Â 0) and MgO(0Â 0Â 1) by direct current magnetron sputtering system with the oblique target
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
280Â nm-thick Ni films were deposited on SiO2/Si(1Â 0Â 0) and MgO(0Â 0Â 1) substrates at 300Â K, 513Â K and 663Â K by a direct current magnetron sputtering system with the oblique target. The films deposited at 300Â K mainly have a [1Â 1Â 0] crystalline orientation in the film growth direction. The [1Â 1Â 0]-orientation weakens and the [1Â 1Â 1]- and [1Â 0Â 0]-orientations enhance with increasing deposition temperature. The lattice constant of the Ni films is smaller than that of the Ni bulk, except for the film grown on MgO(0Â 0Â 1) at 663Â K. Furthermore, as the deposition temperature increases, the lattice constant of the films grown on the SiO2/Si(1Â 0Â 0) decreases whereas that of the films grown on the MgO(0Â 0Â 1) increases. The films deposited at 300Â K and 513Â K grow with columnar grains perpendicular to the substrate. For the films deposited at 663Â K, however, the columnar grain structure is destroyed, i.e., an about 50Â nm-thick layer consisting of granular grains is formed at the interface between the film and the substrate and then large grains grow on the layer. The Ni films deposited at 300Â K consist of thin columnar grains and have many voids at the grain boundaries. The grains become thick and the voids decrease with increasing deposition temperature. The resistivity of the film decreases and the saturation magnetization increases with increasing deposition temperature.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 255, Issue 12, 1 April 2009, Pages 6226-6231
Journal: Applied Surface Science - Volume 255, Issue 12, 1 April 2009, Pages 6226-6231
نویسندگان
Ya Yang, Hong Qiu, Xiaobai Chen, Mingpeng Yu,