کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5362580 | 1388289 | 2009 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
On the short-range order of the SiOx (0 â¤Â x â¤Â 2) surface
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Fine (oscillating) structure (FS) in the elastically scattered electron spectra (ESES) [O. Bondarchuk, S. Goysa, I. Koval, P. Melnik, M. Nakhodkin, Surf. Sci. 258 (1991) 239; O. Bondarchuk, S. Goysa, I. Koval, P. Melnik, M. Nakhodkin, Surf. Rev. Lett. 4 (1997) 965] was used to investigate surface structure of the SiOx (0 â¤Â x â¤Â 2). SiOx surface with different stoichiometry was prepared by implantation of 500 eV oxygen ions into a silicon wafer. Fourier transformation of the FS ESES contains one peak at 2.32 Ã
for Si, two peaks at 1.62Â Ã
and 2.65Â Ã
for a-SiO2 and three peaks centered at 1.6-1.7Â Ã
, 2.1-2.2Â Ã
and 2.65-3.04Â Ã
for SiOx. Peaks at 1.62Â Ã
and 2.65Â Ã
are assigned to Si-O and O-O nearest distances correspondently. Ratio of the area under the peak at 2.65Â Ã
to the area under the peak at 1.62Â Ã
turned out to be not constant but grows linearly with the composition parameter x. The latter is considered to prove validity of the Random Bond Model to describe short-range order on the surface of non-stoichiometric silicon oxide.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 255, Issue 12, 1 April 2009, Pages 6421-6425
Journal: Applied Surface Science - Volume 255, Issue 12, 1 April 2009, Pages 6421-6425
نویسندگان
O. Bondarchuk, S. Goysa, I. Koval, P. Melnik, M. Nakhodkin,