کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5362590 | 1503686 | 2013 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characterizations of arsenic-doped zinc oxide films produced by atmospheric metal-organic chemical vapor deposition
ترجمه فارسی عنوان
خصوصیات فیلم های اکسید روی آلیاژ آرسنیک تولید شده توسط رسوب بخار شیمیایی فلزات آلی اتمسفری
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
چکیده انگلیسی
p-type ZnO films were prepared by atmospheric metal-organic chemical vapor deposition technique using arsine (AsH3) as the doping source. The electrical and optical properties of arsenic-doped ZnO (ZnO:As) films fabricated at 450-600 °C with various AsH3 flow rates ranging from 8 to 21.34 μmol/min were analyzed and compared. Hall measurements indicate that stable p-type ZnO films with hole concentrations varying from 7.2 Ã 1015 to 5.8 Ã 1018 cmâ3 could be obtained. Besides, low temperature (17 K) photoluminescence spectra of all ZnO:As films also demonstrate the dominance of the line related to the neutral acceptor-bound exciton. Moreover, the elemental identity and chemical bonding information for ZnO:As films were examined by X-ray photoelectron spectroscopy. Based on the results obtained, the effects of doping conditions on the mechanism responsible for the p-type conduction were studied. Conclusively, a simple technique to fabricate good-quality p-type ZnO films has been recognized in this work. Depositing the film at 550 °C with an AsH3 flow rate of 13.72 μmol/min is appropriate for producing hole concentrations on the order of 1017 cmâ3 for it. Ultimately, by increasing the AsH3 flow rate to 21.34 μmol/min for doping and depositing the film at 600 °C, ZnO:As films with a hole concentration over 5 Ã 1018 cmâ3 together with a mobility of 1.93 cm2Vâ1 sâ1 and a resistivity of 0.494 ohm-cm can be achieved.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 277, 15 July 2013, Pages 1-6
Journal: Applied Surface Science - Volume 277, 15 July 2013, Pages 1-6
نویسندگان
Li-Wei Weng, Wu-Yih Uen, Shan-Ming Lan, Sen-Mao Liao, Tsun-Neng Yang, Chih-Hung Wu, Hwe-Fen Hong, Wei-Yang Ma, Chin-Chang Shen,