The electrical, optical and magnetic properties of Si-doped ZnO films

► The resistivity of the ZnO films can significantly decrease by Si-doped. ► The bandgap of the film increases to 3.52 eV when Si concentration is of 6%. ► Yellow emission enhances due to the increase of extrinsic impurity or defects. ► The maximum magnetic moment of 2.6 μB/Si is obtained.