کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5362802 | 1388293 | 2009 | 4 صفحه PDF | دانلود رایگان |

We have investigated the temperature and composition dependent photoluminescence (PL) spectra in Ga1âxMnxN layers (where x â 0.1-0.8%) grown on sapphire (0 0 0 1) substrates using the plasma-enhanced molecular beam epitaxy technique. The efficient PL is peaked in the red (1.86 eV), yellow (2.34 eV), and blue (3.29 eV) spectral range. The band-gap energy of the Ga1âxMnxN layers decreased with increasing temperature and manganese composition. The band-gap energy of the Ga1âxMnxN layers was modeled by the Varshni equation and the parameters were determined to be α = 2.3 Ã 10â4, 2.7 Ã 10â4, 3.4 Ã 10â4 eV/K and β = 210, 210, and 230 K for the manganese composition x = 0.1%, 0.2%, and 0.8%, respectively. As the Mn concentration in the Ga1âxMnxN layers increased, the temperature dependence of the band-gap energy was clearly reduced.
Journal: Applied Surface Science - Volume 255, Issue 9, 15 February 2009, Pages 4840-4843