کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5362868 | 1388294 | 2011 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Investigation of crystal structure and new ellipsometric properties of hexagonal CdS epilayers
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
High quality hexagonal CdS epilayer was grown on GaAs (1 1 1) substrates by the hot-wall epitaxy method. The crystal structure of the grown CdS epilayers was confirmed to be the hexagonal structure by X-ray diffraction pattern and scanning electron microscopy image. The optical properties of the hexagonal CdS epilayers were investigated in a wide photon energy range between 2.0 and 8.5 eV using spectroscopic ellipsometry (SE) at room temperature. The data obtained by SE were analyzed to find the critical points of the pseudodielectric function spectra, ãÉ(E)ã = ãÉ1(E)ã + iãÉ2(E)ã, such as E0, E1A, E1B, E0â², F1, and two E2 structures. In addition, the second derivative spectra, d2É(E)/dE2, of the pseudodielectric function of hexagonal CdS epilayers were numerically calculated to determine the critical structures. Four structures, such as E0â² F1, and two E2 structures, from 6.0 eV to 8.0 eV were observed, for the first time, at 300 K by ellipsometric measurements for the hexagonal CdS epilayers.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 257, Issue 24, 1 October 2011, Pages 10402-10407
Journal: Applied Surface Science - Volume 257, Issue 24, 1 October 2011, Pages 10402-10407
نویسندگان
D.J. Kim, Y.D. Choi, J.W. Lee, J.C. Sur,