Performance improvement of Sb2Te3 phase change material by Al doping

► Al atoms are introduced in Sb2Te3 phase change material in order to improve the thermal stability. ► The data retention temperature at 10 years is up to 110 °C, much better than the Ge2Sb2Te5 material. ► The additional Al-Sb and Al-Te bonds within Sb2Te3 lead to better thermal stability. ► Phase-change memory cell based on Al0.69Sb2Te3 can be triggered by a nanosecond magnitude pulse between amorphous and crystalline states.